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| IRG4BC30FD1PBF www.irf.com 1 = e g n-channel c fast copack igbt insulated gate bipolar transistor withhyperfast diode ! "# $ %&$'( ) * + $ ,# &$'( + -./ 00 ) + # &+(1 !2' # $ %&$'(3 +) 0*0 # &$'(3 0 # -./ &$'(3# 4 ) + 0 5 ** # 6 to-220ab absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 17 a i cm pulse collector current (ref.fig.c.t.5) 124 i lm clamped inductive load current 124 i f @ t c = 100c diode continuous forward current 8 i fm diode maximum forward current 16 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt CCC CCC 1.2 c/w r jc junction-to-case- diode CCC CCC 2.0 r cs case-to-sink, flat, greased surface CCC 0.50 CCC r ja junction-to-ambient, typical socket mount CCC CCC 80 wt weight CCC 2.0 (0.07) CCC g (oz.) downloaded from: http:/// IRG4BC30FD1PBF 2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)ces collector-to-emitter breakdown voltage 6 0 0v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.69v/c v ge = 0v, i c = 1ma 1.59 1.8 i c = 17a v ge = 15v v ce(on) collector-to-emitter voltage 1.99 v i c = 31a see fig. 2, 5 1 . 7 i c = 17a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v v ce = v ge , i c = 250a ? v ge(th) / ? t j threshold voltage temp. coefficient -11 mv/ c v ce = v ge , i c = 250 a gfe forward transconductance 6.1 10 s v ce = 100v, i c = 17a i ces zero gate voltage collector current 250 a v ge = 0v, v ce = 600v 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 2.0 2.4 v i f = 8.0a see fig. 13 1 . 31 . 8 i f = 8.0a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 57 62 i c = 17a q ge gate-to-emitter charge (turn-on) 10 12 nc v cc = 400v see fig. 8 q gc gate-to-collector charge (turn-on) 21 24 v ge = 15v t d(on) turn-on delay time 22 t j = 25c t r rise time 24 ns i c = 17a, v cc = 480v t d(off) turn-off delay time 250 320 v ge = 15v, r g = 23 ? t f fall time 160 210 energy losses inlcude "tail" and e on turn-on switching loss 370 diode reverse recovery. e off turn-off switching loss 1420 j see fig. 9, 10, 11, 18 e ts total switching loss 1800 2290 t d(on) turn-on delay time 21 t j = 150c see fig. 9,10,11,18 t r rise time 25 ns i c = 17a, v cc = 480v t d(off) turn-off delay time 400 v ge = 15v, r g = 23 ? t f fall time 340 energy losses inlcude "tail" and e ts total switching loss 3280 j diode reverse recovery. l e internal emitter inductance 7.5 nh measured 5mm from package c ies input capacitance 1170 v ge = 0v c oes output capacitance 100 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 11 f = 1.0mhz t rr diode reverse recovery time 46 61 ns t j = 25c see fig. 8 59 3 t j = 125c 14 i rr diode peak reverse recovery current 4.8 6.5 a t j = 25c see fig. 8 . 51 0 t j = 125c 15 q rr diode reverse recovery charge 110 190 nc t j = 25c see fig. 410 550 t j = 125c 16 di (rec)m /dt diode peak rate of fall of recovery 260 a/s t j = 25c see fig. during t b 270 t j = 125c 17 v r = 200v di/dt 200a/s conditions conditions i f = 12a downloaded from: http:/// IRG4BC30FD1PBF www.irf.com 3 ! "! 1 10 100 1000 11 0 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v20s pulse width ge a 1 10 100 1000 567891 01 11 21 3 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 50v5s pulse width cc downloaded from: http:/// IRG4BC30FD1PBF 4 www.irf.com #$%%&"" !%'% () &%*+ ) % #$%% % 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v80s pulse width ge a t , junction temperature (c) j i = 8.5a i = 17a i = 34a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 10 20 30 40 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge downloaded from: http:/// IRG4BC30FD1PBF www.irf.com 5 ,-!+ ) % ,-!+ . / .!+ .&%*+ &%*+ 0 10 20 30 40 50 r g , gate resistance ( ? ) 1600 1700 1800 1900 2000 t o t a l s w i c h i n g l o s s e s ( m j ) v ce = 480v v ge = 15v t j = 25c i c = 17a 1 10 100 1000 v ce , collector-toemitter-voltage(v) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 0 1 02 03 04 05 06 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v cc = 400v i c = 17a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , juntion temperature (c) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 22? v ge = 15v v cc = 480v i c = 34a i c = 8.5a i c = 17a downloaded from: http:/// IRG4BC30FD1PBF 6 www.irf.com "", ,-!+ &% 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c gej #$%% -*+ ' - -*+ * 0*1 ' -' 0 1 0.1 1 10 100 01234 t = 175 ? c t = 150 ? c t = 25 ? c jj j 0 10 20 30 40 i c , collecto-to-emitter (a) 1000 2000 3000 4000 5000 6000 7000 8000 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 22? t j = 150c v ce = 480v v ge = 15v downloaded from: http:/// IRG4BC30FD1PBF www.irf.com 7 / / 2 / 2 ,!+ 2 2 2 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 25 50 75 100 125 150 175 200 t r r ( n s ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 100 200 300 400 500 600 700 800 900 1000 q r r ( n c ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 200 400 600 800 1000 1200 1400 d i ( r e c ) m / d t ( a / s ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a downloaded from: http:/// IRG4BC30FD1PBF 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce ! " # $ $ % t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = & ! " '() $ vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt & ! " '( ) $ & ! " '( ) $ % 7& 7 & & 7 & downloaded from: http:/// IRG4BC30FD1PBF www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v fig. 19 - clamped inductive load test circuit fig. 20 - pulsed collector current test circuit fig.18e - macro waveforms for figure 18a's test circuit 0 - vcc r l icm vcc = 480f pulsed collector current test circuit downloaded from: http:/// IRG4BC30FD1PBF 10 www.irf.com notes: *+ , -. + / 012 3" + -. ' (. %( -.4.56* -7 ? 8 ' 9 / (.5 1" .': . 9 / '.5 / ' energy losses include "tail" and diode reverse recovery, using diode fd100h06a5. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2010 note: "p" in assembly line position indicates "lead-free" downloaded from: http:/// |
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